PRISM-a tool for modelling proton energy deposition in semi-conductor materials

Author

Oldfield, M.K. ; Underwood, C.I.

Author_Institution

Surrey Univ., Guildford, UK

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2715

Lastpage

2723

Abstract

This paper presents a description of, and test results from, a new PC based software simulation tool PRISM (Protons In Semiconductor Materials). The model describes proton energy deposition in complex 3D “sensitive volumes” of semiconductor materials. PRISM is suitable for simulating energy deposition in surface-barrier detectors and semiconductor memory devices, the latter being susceptible to Single-Event Upset (SEU) and Multiple-Bit Upset (MBU). The design methodology on which PRISM is based, together with the techniques used to simulate ion transport and energy deposition, are described. Preliminary test results used to analyse the PRISM model are presented and the behavior of a payload on board a UoSAT class micro-satellite, simulated

Keywords

circuit analysis computing; digital simulation; electric sensing devices; integrated circuit reliability; integrated memory circuits; proton effects; space vehicle electronics; 3D sensitive volumes; PRISM; UoSAT class micro-satellite; ion transport; multiple-bit upset; payload; proton energy deposition; semiconductor memory devices; single-event upset; software simulation tool; surface-barrier detectors; Design methodology; Detectors; Materials testing; Protons; Semiconductor device testing; Semiconductor materials; Semiconductor memory; Single event upset; Software testing; Software tools;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556858

Filename

556858