DocumentCode
1319000
Title
Shielding considerations for satellite microelectronics
Author
Fan, Wesley C. ; Drumm, Clifton R. ; Roeske, Stanley B. ; Scrivner, Gary J.
Author_Institution
Dept. of Radiat. & Electromagn. Anal., Sandia Nat. Labs., Albuquerque, NM, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2790
Lastpage
2796
Abstract
Shielding for space microelectronics needs to provide an acceptable dose rate with minimum shield mass. The analysis presented here shows that the best approach is, in general, to use a graded-Z shield, with a high-Z layer sandwiched between two low-Z materials. A graded-Z shield is shown to reduce the electron dose rate by more than sixty percent over a single-material shield of the same areal density. For protons, the optimal shield would consist of a single, low-Z material layer. However, it is shown that a graded-Z shield is nearly as effective as a single-material shield, as long as a low-Z layer is located adjacent to the microelectronics. A specific shield design depends upon the details of the radiation environment, system model, design margins/levels, compatibility of shield materials, etc. Therefore, we present here general principles for designing effective shields and describe how the computer codes are used for this application
Keywords
artificial satellites; electron beam effects; proton effects; radiation protection; shielding; space vehicle electronics; computer code; design; electron irradiation; graded-Z material; proton irradiation; satellite microelectronics; shielding; space radiation environment; Belts; Earth; Electron traps; Magnetic shielding; Microelectronics; Orbits; Protons; Radiation effects; Satellites; Space charge;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556868
Filename
556868
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