• DocumentCode
    1319000
  • Title

    Shielding considerations for satellite microelectronics

  • Author

    Fan, Wesley C. ; Drumm, Clifton R. ; Roeske, Stanley B. ; Scrivner, Gary J.

  • Author_Institution
    Dept. of Radiat. & Electromagn. Anal., Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    2790
  • Lastpage
    2796
  • Abstract
    Shielding for space microelectronics needs to provide an acceptable dose rate with minimum shield mass. The analysis presented here shows that the best approach is, in general, to use a graded-Z shield, with a high-Z layer sandwiched between two low-Z materials. A graded-Z shield is shown to reduce the electron dose rate by more than sixty percent over a single-material shield of the same areal density. For protons, the optimal shield would consist of a single, low-Z material layer. However, it is shown that a graded-Z shield is nearly as effective as a single-material shield, as long as a low-Z layer is located adjacent to the microelectronics. A specific shield design depends upon the details of the radiation environment, system model, design margins/levels, compatibility of shield materials, etc. Therefore, we present here general principles for designing effective shields and describe how the computer codes are used for this application
  • Keywords
    artificial satellites; electron beam effects; proton effects; radiation protection; shielding; space vehicle electronics; computer code; design; electron irradiation; graded-Z material; proton irradiation; satellite microelectronics; shielding; space radiation environment; Belts; Earth; Electron traps; Magnetic shielding; Microelectronics; Orbits; Protons; Radiation effects; Satellites; Space charge;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.556868
  • Filename
    556868