Evaluation of soft-error hardness of DRAMs under quasi-heavy ion irradiation using He single ion microprobe technique

Author

Matsukawa, T. ; Mori, S. ; Tanii, T. ; Arimura, T. ; Koh, M. ; Igarashi, K. ; Sugimoto, T. ; Ohdomari, I.

Author_Institution

Sch. of Sci. & Eng., Waseda Univ., Tokyo, Japan

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2849

Lastpage

2855

Abstract

Soft-error immunity of a 256 kbit DRAM against quasi-heavy ion irradiation has been evaluated using He single ion microprobe at Waseda University. The technique for hitting micron size area with arbitrary number of He ions enables us to simulate the space environment under irradiation of heavy ions with higher LET than that of α-particles. From the maps of error-sensitive sites obtained by irradiating various number of-He ions, the threshold LET of soft-errors, effect of diffused charges on the soft-error cross section, and susceptibility to multi-bit errors have been estimated. The results of measuring single-ion induced noise charges at the PN junction which is considered as equivalent to the storage node of the DRAM have been presented and the origins which determine the soft-error immunity under irradiation with various LET have been discussed

Keywords

DRAM chips; errors; ion beam effects; ion microprobe analysis; radiation hardening (electronics); 256 kbit; DRAM; He; He single ion microprobe; LET; PN junction; quasi-heavy ion irradiation; soft-error hardness; space environment simulation; Electrons; Energy exchange; Helium; Ion accelerators; Ion beams; Linear accelerators; Manufacturing; Microwave integrated circuits; Random access memory; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556876

Filename

556876