Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: computer simulation

Author

McMorrow, Dale ; Curtice, Walter R. ; Buchner, Steve ; Knudson, Alvin R. ; Melinger, Joseph S. ; Campbell, Arthur B.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2904

Lastpage

2912

Abstract

Two-dimensional device simulations of GaAs MESFETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer reveal a sensitive dependence of the charge-collection characteristics on various structural and operational parameters. Simulations performed for above-band-gap pulsed laser excitation indicate that, even when the bulk of the charge is deposited above the LT region, the improved SEU and charge-collection performance of LT GaAs devices largely is a consequence of the reduced efficiency of the carrier-induced charge-enhancement (gain) mechanisms

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; laser beam effects; semiconductor device models; GaAs; GaAs MESFET; SEU; carrier-induced charge-enhancement; charge collection; computer simulation; gain; low-temperature grown GaAs buffer layer; pulsed laser excitation; two-dimensional device simulation; Buffer layers; Charge carrier lifetime; FETs; Gallium arsenide; MESFETs; Optical materials; Pulsed laser deposition; Single event upset; Space technology; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556884

Filename

556884