• DocumentCode
    1319219
  • Title

    AlGaInAs/AlGaAs SSQW GRINSCH lasers for the wavelength region between 800 and 870 nm

  • Author

    Buydens, L. ; Demeester, Piet ; Van Daele, Peter

  • Author_Institution
    Gent Univ., Belgium
  • Volume
    27
  • Issue
    8
  • fYear
    1991
  • fDate
    4/11/1991 12:00:00 AM
  • Firstpage
    618
  • Lastpage
    620
  • Abstract
    A semiconductor laser is proposed which has an optical active region consisting of an 8 nm thick Al0.20Ga0.65In0.15As/Al0.20Ga0.80As strained single quantum well. The spectral emission peak of this quantum well is situated between 814 and 818 nm. The optical confinement is achieved using a standard graded refractive index separate confinement heterostructure optimised for the emission wavelength of the quantum well. Preliminary results show these lasers to have a threshold current of 18 mA.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; semiconductor junction lasers; 800 to 870 nm; Al 0.2Ga 0.65In 0.15As Al 0.2Ga 0.8As; SSQW GRINSCH lasers; graded refractive index separate confinement heterostructure; optical active region; optical confinement; semiconductor laser; spectral emission peak; strained single quantum well; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910388
  • Filename
    83269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319219