DocumentCode
1319281
Title
Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs
Author
LaBel, Kenneth A. ; Gates, Michele M. ; Moran, Amy K. ; Kim, Hak S. ; Seidleck, Christina M. ; Marshall, Paul ; Kinnison, James ; Carkhuff, Bliss
Author_Institution
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2974
Lastpage
2981
Abstract
This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken
Keywords
DRAM chips; gamma-ray effects; integrated circuit testing; ion beam effects; proton effects; space vehicle electronics; 16 Mbit; NASA Goddard Space Flight Center; heavy ion irradiation; multi-chip stacked DRAMs; proton irradiation; radiation effects characterization; single-chip DRAM; spaceflight candidate dynamic RAMs; stacked DRAM module; test methodology; test methods; Laboratories; NASA; National electric code; Packaging; Performance evaluation; Protons; Radiation effects; Random access memory; Space vehicles; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556894
Filename
556894
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