• DocumentCode
    1319809
  • Title

    Radiation and postirradiation functional upsets in CMOS SRAM

  • Author

    Chumakov, A.I. ; Yanenko, A.V.

  • Author_Institution
    Specialized Electron. Syst., Moscow, Russia
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    12/1/1996 12:00:00 AM
  • Firstpage
    3109
  • Lastpage
    3114
  • Abstract
    The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed
  • Keywords
    CMOS memory circuits; SRAM chips; X-ray effects; annealing; beta-ray effects; electron beam effects; CMOS SRAM; LINAC irradiation; Sr-90 irradiation; X-ray irradiation; annealing; dose rate; postirradiation functional upsets; radiation functional upsets; total dose; Annealing; Decoding; Driver circuits; Electrons; Error correction; Linear particle accelerator; MOSFET circuits; Random access memory; Read-write memory; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.556912
  • Filename
    556912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1319809