Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes

Author

Colbourne, Paul D. ; Cassidy, Daniel T.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada

Volume

27

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

914

Lastpage

920

Abstract

Mechanical stress induced by bonding AlGaAs superluminescent diodes to Cu, SiC, or diamond heat sinks using 40% Pb-60% Sn or 80% Au-20% Sn solder has been observed using measurements of the degree of polarization of the facet emission at low current levels. Stresses up to 10⁹ dyn/cm² were observed, with the magnitude of the stress dependent on the solder used, and the sign of the stress dependent on the difference in thermal expansion coefficient between the diode and the heat sink. Relaxation of the bonding stress over time was investigated as a function of temperature for each solder. The implications of the relaxation for the interpretation of high-temperature life tests, of superluminescent and laser diodes are discussed

Keywords

adhesion; aluminium compounds; gallium arsenide; life testing; optical testing; semiconductor device testing; semiconductor junction lasers; stress measurement; stress relaxation; superradiance; thermal expansion; AlGaAs superluminescent diodes; Au-Sn; C; Cu; Pb-Sn; SiC; bonding stress relaxation measurements; diamond heat sinks; facet emission; high-temperature life tests; laser diode testing; low current levels; mechanical stress; polarisation degree; semiconductors; solder; thermal expansion coefficient; Bonding; Current measurement; Heat sinks; Mechanical variables measurement; Polarization; Silicon carbide; Stress measurement; Superluminescent diodes; Thermal stresses; Tin;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.83326

Filename

83326