Theoretical study of differential gain in strained quantum well structures

Author

Suemune, Ikuo

Author_Institution

Fac. of Eng., Hiroshima Univ., Higashihiroshima, Japan

Volume

27

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1149

Lastpage

1159

Abstract

The differential gain expected in a strained quantum well (QW) and in a lattice-matched QW is discussed based on a theoretical treatment of the band structures where the band nonparabolicity is taken into account. The differential gain in strained QWs will be larger by about three to four times relative to lattice-matched QWs, and a maximum differential gain of 4-6×10^-15 cm² will be possible in strained QWs. The anisotropy of the subband nonparabolicity in lattice-matched QWs contributes to the larger difference between the two types of QWs. The calculated band-edge effective masses and the calculated laser properties, are compared to the available measurements, and some comments are given for realizing high-speed strained lasers

Keywords

effective mass (band structure); interface electron states; semiconductor junction lasers; semiconductor quantum wells; band nonparabolicity; band structures; band-edge effective masses; calculated laser properties; differential gain; high-speed strained lasers; lattice matched quantum wells; strained quantum well structures; subband nonparabolicity; theoretical treatment; Cutoff frequency; Effective mass; High speed optical techniques; Laser beam cutting; Nonlinear optics; Optical films; Optical saturation; Quantum mechanics; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.83371

Filename

83371