Enhanced Electric and Magnetic Properties of the Epitaxial $({\rm Ba}_{0.5}{\rm Sr}_{0.5}){\rm TiO}_{3}/{\rm BiFeO}_{3}$ Multiferroic Heterostructure

Multiferroic heterostructure (Ba_0.5Sr_0.5)TiO₃(BST)/BiFeO₃(BFO) have been deposited by pulsed laser deposition method. X-ray diffraction shows that the BFO and BST were epitaxial grown on La_0.7Sr_0.3MnO₃-buffered (100) SrTiO₃ substrate. Interestingly, the BST/BFO heterostructure exhibits improved ferroelectric and ferromagnetic behaviors with remnant polarization (2Pr) ~ 34.8 μC/cm² and saturation magnetization (Ms) ~ 4.65 emu/cm³. Compared with the single BFO film, the BST/BFO heterostructure showed higher dielectric constant and lower dielectric loss. Furthermore, the leakage behaviors of the BST/BFO heterostructure were consistent with SCLC behavior at low electric-field region and PF emission at high electric-field region. Our result indicates the BST/BFO multiferroic heterostructure may be a promising material for the high-density memory application.