• DocumentCode
    1321922
  • Title

    pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures

  • Author

    Yang, Po-Yu ; Wang, Jyh-Liang ; Chiu, Po-Chun ; Chou, Jung-Chuan ; Chen, Cheng-Wei ; Li, Hung-Hsien ; Cheng, Huang-Chung

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    32
  • Issue
    11
  • fYear
    2011
  • Firstpage
    1603
  • Lastpage
    1605
  • Abstract
    The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85°C . The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.
  • Keywords
    II-VI semiconductors; aluminium; chemical sensors; crystal defects; electrical conductivity; field effect transistors; nanoelectronics; nanowires; pH measurement; wide band gap semiconductors; zinc compounds; EGFET; ZnO:Al; conductivity; crystallinity; disposable biosensors; doped nanostructures; extended-gate field-effect transistor; flexible biosensors; glass substrate; hydrothermal growth; nanowire array; pH sensing; structural defects; temperature 85 degC; Conductivity; Electrodes; Nanostructures; Sensitivity; Sensors; Substrates; Zinc oxide; Al-doped zinc oxide (AZO); extended-gate field-effect transistor (EGFET); hydrothermal method; low temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2164230
  • Filename
    6020735