DocumentCode
1322127
Title
Co 
FeSi Based Magnetic Tunnel Junctions With BaO Barrier
Author
Rogge, J. ; Hedwig, P. ; Sterwerf, C. ; Hutten, A.
Author_Institution
Thin Films & Phys. of Nanostruct., Bielefeld Univ., Bielefeld, Germany
Volume
48
Issue
11
fYear
2012
Firstpage
3825
Lastpage
3828
Abstract
BaO has been introduced as a novel tunnel barrier material in magnetic tunnel junctions (MTJs). Due to the good agreement regarding lattice constants and crystal structure, we believe BaO to be particularly suitable as barrier in MTJs containing Heusler compound electrodes. Co2FeSi/BaO/Fe MTJs have been fabricated by molecular beam epitaxy (MBE) and investigated in terms of microstructure, transport properties and tunnel magneto resistance (TMR). A TMR amplitude as high as 104% at room temperature (RT) has been achieved for very small bias voltages (VBias) and a strong dependence on VBias could be observed as the TMR ratio decreases with increasing VBias to about 14% at VBias = 10 mV.
Keywords
barium compounds; cobalt alloys; crystal microstructure; crystal structure; iron alloys; lattice constants; molecular beam epitaxial growth; silicon alloys; tunnelling magnetoresistance; BaO barrier; Co2FeSi-BaO-Fe; Heusler compound electrodes; crystal structure; lattice constants; magnetic tunnel junctions; microstructure; molecular beam epitaxy; temperature 293 K to 298 K; transport properties; tunnel barrier material; tunnel magnetoresistance; voltage 10 mV; Electrical resistance measurement; Electrodes; Iron; Junctions; Magnetic tunneling; Molecular beam epitaxial growth; Tunneling magnetoresistance; Barium oxide; Heusler compound; magnetic films; magnetic tunnel junction (MTJ); molecular beam epitaxy (MBE); thin films; tunneling magnetoresistance;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2012.2197373
Filename
6332910
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