DocumentCode
1322214
Title
Monte Carlo simulations of repeated velocity overshoot structures
Author
Beton, P.H. ; Long, A.P. ; Kelly, M.J. ; Matthews, P.M.
Author_Institution
GEC Res. Ltd., Hirst Res. Centre, Wembley, UK
Volume
24
Issue
13
fYear
1988
fDate
6/23/1988 12:00:00 AM
Firstpage
817
Lastpage
818
Abstract
The authors have performed self-consistent Monte Carlo simulations on repeated velocity overshoot structures. From their calculations, they assess the potential of such structures to enhance the average drift velocity of electrons. It is found that there is no enhancement for uniformly doped structures. For spike-doped structures there is a small enhancement, but this is gained at the expense of a drop in current density. In both structures the velocity enhancement is limited by intervalley scattering
Keywords
Monte Carlo methods; doping profiles; semiconductor device models; Monte Carlo simulations; average electron drift velocity; current density; intervalley scattering; repeated velocity overshoot structures; spike-doped structures; uniformly doped structures; velocity enhancement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8353
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