Enhanced Exchange Bias of Spin Valves Fabricated on Fullerene-Based Seed Layers

Author

Wheeler, M. ; Hickey, B.J. ; Céspedes, O.

Author_Institution

Condensed Matter Dept., Univ. of Leeds, Leeds, UK

Volume

48

Issue

11

fYear

2012

Firstpage

3047

Lastpage

3050

Abstract

The magnetic properties of exchange biased systems deposited on top of fullerene-based materials have been studied. An enhanced exchange bias field has been observed for Si/SiO₂/C₆₀/Co/Cu/Co/IrMn/Ta and Si/SiO₂ /FeC₆₀ /Co/Cu/Co/IrMn/Ta in comparison to a typical structure of Si/SiO₂/Ta/Co/Cu/Co/IrMn/Ta. Here the magnetic properties of the devices are changed significantly with an organic underlayer or seed layer. The magnetic ordering is well maintained, and C₆₀ seeding results in an exchange bias of (19.5 ±0.5) mT, some 7 mT higher than that of Ta seeded spin valves (12.5 ±0.5 mT). A combination of MOKE (magneto-optical Kerr effect), X-ray diffraction and Raman spectroscopy have been used to characterize the materials and further understand the interactions between the Co and fullerene-based materials.

Keywords

Kerr magneto-optical effect; Raman spectra; X-ray diffraction; cobalt; copper; exchange interactions (electron); fullerenes; iridium alloys; iron compounds; manganese alloys; organic compounds; silicon; silicon compounds; spin valves; tantalum; MOKE; Raman spectroscopy; Si-SiO₂-C₆₀-Co-Cu-Co-IrMn-Ta; Si-SiO₂-FeC₆₀-Co-Cu-Co-IrMn-Ta; X-ray diffraction; enhanced exchange bias; fullerene based seed layer; magnetic ordering; magnetooptical Kerr effect; organic underlayer; spin valve; Coercive force; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Silicon; Spin valves; C $_{60}$; exchange bias; magnetoresistance; organic spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2012.2198200

Filename

6332990