DocumentCode
1323422
Title
Single SiC/Si heterostructure negative-differential-resistance diode for resistive-fuse applications
Author
Wu, Kuen-Hsien ; Fang, Yean-Kuen ; Ho, Jyh-Jier ; Chen, Tzer-Jing ; Hwang, Jun-Dar
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
33
Issue
21
fYear
1997
fDate
10/9/1997 12:00:00 AM
Firstpage
1824
Lastpage
1825
Abstract
A novel resistive-fuse with near ideal current-voltage characteristics has been successfully implemented by using a single SiC/Si heterostructure negative-differential-resistance (NDR) diode. This novel resistive fuse possesses several advantages. Including its simple structure and fabrication process, very low current levels in off-operation, and the potential for high-temperature operation
Keywords
electric fuses; elemental semiconductors; negative resistance devices; semiconductor diodes; semiconductor materials; silicon; silicon compounds; NDR diode; SiC-Si; current levels; current-voltage characteristics; heterostructure negative-differential-resistance diode; high-temperature operation; off-operation; resistive-fuse applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971205
Filename
633419
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