DocumentCode
1323428
Title
Six-parameter DC GaAs FET model for nonlinear circuit simulation
Author
Cao, J. ; Lin, F. ; Kooi, P.S. ; Leong, M.S.
Author_Institution
Instiute of Microelectron., Singapore
Volume
33
Issue
21
fYear
1997
fDate
10/9/1997 12:00:00 AM
Firstpage
1825
Lastpage
1827
Abstract
By emphasising the aspects of simplicity and accuracy for GaAs FET modelling, a six-parameter DC GaAs FET model is developed. Good agreement between simulated and measured data is obtained
Keywords
semiconductor device models; FET model; GaAs; III-V semiconductors; nonlinear circuit simulation; six-parameter DC model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971237
Filename
633420
Link To Document