DocumentCode
1323432
Title
Formation and analysis of shallow arsenic profiles
Author
Clayton, Steven ; Sedgwick, T. ; Reedy, R. ; Michel, A. ; Scilla, G.
Author_Institution
Naval Ocean Syst. Center, San Diego, CA
Volume
24
Issue
14
fYear
1988
fDate
7/7/1988 12:00:00 AM
Firstpage
831
Lastpage
833
Abstract
Shallow arsenic implants were activated by furnace and rapid thermal annealing (RTA). Comparisons of junction depths measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) showed SIMS values 50-90 nm deeper than SR values, due to ion knock-on during SIMS profiling
Keywords
annealing; arsenic; elemental semiconductors; ion implantation; semiconductor doping; silicon; 50 to 90 nm; RTA; SIMS; Si:As; furnace annealing; ion knock-on; junction depths; rapid thermal annealing; secondary ion mass spectrometry; semiconductors; shallow implants; spreading resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8364
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