DocumentCode
1323434
Title
Tunable optical Doppler frequency detector using semi-insulating GaAs semiconductor-metal field-effect transistors
Author
Wang, Chm-Chia ; Linke, R.A. ; Trivedi, S.
Author_Institution
NEC Res. Inst., Princeton, NJ, USA
Volume
33
Issue
21
fYear
1997
fDate
10/9/1997 12:00:00 AM
Firstpage
1827
Lastpage
1828
Abstract
A tunable optical Doppler frequency detector is demonstrated in semi-insulating GaAs metal-semiconductor field-effect transistors (MESFET) based on moving space charge field effects. The application of the gate bias voltage, which modifies the free carrier density in the conducting channel of the device, modulates both the response time as well as the magnitude of the photocurrent generated by non-stationary optical interference patterns
Keywords
Doppler measurement; III-V semiconductors; Schottky gate field effect transistors; carrier density; gallium arsenide; optical variables measurement; photodetectors; phototransistors; space-charge-limited conduction; GaAs; conducting channel; free carrier density; gate bias voltage; moving space charge field effects; nonstationary optical interference patterns; photocurrent; response time; semiconductor-metal field-effect transistors; tunable optical Doppler frequency detector;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971213
Filename
633421
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