Development of a beta skin dose monitor using a silicon detector

Author

Chung, Manho ; Jester, William A. ; Levine, Samuel H.

Author_Institution

Dept. of Nucl. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

38

Issue

4

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

964

Lastpage

970

Abstract

A prototype skin dose monitor has been constructed and tested successfully. The monitor uses an ion-implanted silicon detector available commercially. The detector was selected since it has a lower leakage current than the other type of silicon detectors. It operates on both a pulse mode and current mode, and there is an overlap in the measurable beat dose rate ranges of these two modes. The prototype device includes an 8-b A/D converter and an 8-b microprocessor to display the skin dose directly. The device presently covers more than five orders of magnitude in the measurable beta skin dose rate ranges. The device has been calibrated using an extrapolation chamber and has been used to measure the dose rates produced by several different beta and beta/gamma sources

Keywords

beta-ray detection and measurement; dosimeters; semiconductor counters; A/D converter; Si; beat dose rate ranges; beta skin dose monitor; current mode; dose rates; dosimeter; ion implanted detector; microprocessor; pulse mode; Current measurement; Detectors; Leak detection; Leakage current; Monitoring; Prototypes; Pulse measurements; Silicon; Skin; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.83859

Filename

83859