DocumentCode
1326304
Title
Widely Tunable High-Efficiency Power Amplifier With Ultra-Narrow Instantaneous Bandwidth
Author
Chen, Kenle ; Liu, Xiaoguang ; Peroulis, Dimitrios
Author_Institution
Birck Nano Technol. Center, Purdue Univ., West Lafayette, IN, USA
Volume
60
Issue
12
fYear
2012
Firstpage
3787
Lastpage
3797
Abstract
This paper reports the first power amplifier (PA) that simultaneously achieves a very narrow instantaneous bandwidth (2%) while being tunable over a 38.5% frequency range (2.1-3.1 GHz) with a measured 50%-60% efficiency in the entire band. Such PAs are in great demand for realizing all-digital burst-mode transmitters that are expected to become critical for the future generation of wireless communication systems. Unlike state-of-the-art planar PAs that cannot simultaneously achieve a narrow bandwidth and high efficiency, the presented PA employs a widely tunable high-Q (Q >; 300 over the tuning range) cavity resonator as the output matching network. Furthermore, the tunable multiband matching is performed for both the fundamental frequency and the second harmonic to ensure a high efficiency. The measured PA is implemented with a Cree GaN transistor, and it delivers an output power of ≥ 36 dBm at a gain of ≥ 10 dB. Two-tone testing is further conducted, indicating a good linearity of this PA with an output third-order intercept point greater than 48 dBm over the entire band. This design demonstrates, for the first time, that multiband burst-mode transmitters can be potentially built with widely tunable high-efficiency narrowband PAs.
Keywords
III-V semiconductors; Q-factor; cavity resonators; gallium compounds; power amplifiers; wide band gap semiconductors; Cree GaN transistor; all-digital burst-mode transmitter; cavity resonator; frequency 2.1 GHz to 3.1 GHz; high-efficiency power amplifier; multiband burst-mode transmitter; narrowband PA; output matching network; tunable multiband matching; two-tone testing; ultra-narrow instantaneous bandwidth; widely tunable power amplifier; wireless communication system; Cavity resonators; Impedance; Narrowband; Resonant frequency; Transistors; Tuning; Evanescent-mode (EVA) cavity; GaN; high efficiency; matching network; narrowband; piezoelectric actuator; power amplifier (PA); quality factor; tunable resonator;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2012.2220561
Filename
6338312
Link To Document