Effect of source and load resistance on the performance of bistable lasers

Author

Madhan, M.G. ; Vaya, P.R. ; Gunasekaran, N.

Author_Institution

Sch. of Electron. & Commun. Eng., Anna Univ., Madras, India

Volume

12

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

380

Lastpage

382

Abstract

The effect of source and load resistances on the bistable behavior of multiquantum-well laser diodes is studied. Lower values of source resistance are found to affect the threshold current with a slight change in the hysterisis width. Also, the turn ON delay is found to decrease exponentially with the increase in source resistance. Lower values of load resistance leads to smaller hysterisis width, and for values less than 125 /spl Omega/, for the device under study with an input resistance (R/sub in/) of 1 k/spl Omega/, an astable behavior is observed when triggered by an electrical pulse in the gain section.

Keywords

equivalent circuits; hysteresis; laser beams; laser stability; laser theory; optical bistability; quantum well lasers; semiconductor device models; 1 kohm; 125 ohm; astable behavior; bistable behavior; bistable lasers; electrical pulse; gain section; hysterisis width; input resistance; load resistance; multiquantum-well laser diodes; performance; source resistance; threshold current; turn ON delay; Circuit simulation; Diode lasers; Electric resistance; Equivalent circuits; Laser modes; Quantum well devices; Quantum well lasers; Resistors; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.839025

Filename

839025