Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

Author

Jallepalli, S. ; Bude, J. ; Shih, W.-K. ; Pinto, M.R. ; Maziar, C.M. ; Tasch, A.F., Jr.

Volume

44

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

297

Lastpage

303

Abstract

A first-principles approach to inversion layer quantization, valid for arbitrarily complex band structures, has been developed. This has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied. In addition, electron quantization effects are revisited, improving on previous, simpler approaches. In particular, the impact of quantization on the threshold voltages and “effective” gate oxide thicknesses of p- and n-MOSFETs is investigated. A simple compact model is provided to quantitatively describe the threshold voltage shifts at 300 K as a function of the doping concentration and the oxide thickness. The significance of hole quantization for buried channel p-MOS structures is also studied. The results can be used to both identify and model these effects using popular device simulators

Keywords

MOSFET; carrier mobility; characteristics measurement; doping profiles; elemental semiconductors; inversion layers; semiconductor device models; semiconductor doping; silicon; 300 K; MOSFET characteristics; Si-SiO₂; arbitrarily complex band structures; buried channel p-MOS structures; compact model; deep submicron devices; device simulators; doping concentration; electron quantization; gate oxide thicknesses; hole quantization; inversion layer quantization; threshold voltages; Charge carrier processes; Doping; Electrons; MOSFET circuits; Potential well; Quantization; Semiconductor process modeling; Silicon; Thickness control; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.557719

Filename

557719