• DocumentCode
    1327880
  • Title

    A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET´s

  • Author

    Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J. ; Sánchez, F. J Garcla

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
  • Volume
    44
  • Issue
    2
  • fYear
    1997
  • fDate
    2/1/1997 12:00:00 AM
  • Firstpage
    340
  • Lastpage
    343
  • Abstract
    The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFETs. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. The effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature
  • Keywords
    MOSFET; capacitance; digital simulation; semiconductor device models; 2D device simulator; MOSFETs; capacitance-based method; effective channel length; Capacitance; Current measurement; Data mining; Doping; Electric variables; MOSFET circuits; Numerical analysis; Substrates; Two dimensional displays; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.557729
  • Filename
    557729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1327880