Physical Basis for Evaluating the Reliability of pߝn Junction Devices

The measurement and prediction of the reliability of semiconductor devices is becoming increasingly more dependent upon an understanding of device physics. The present level of understanding tanding of device physics is, however, inadequate for many practical purposes. This paper reviews the present status of p-n junction theory, its relevance to device degradation, and the experimental techniques available for measuring intrinsic device properties. Limitations in the theory and additional development required to meet the needs of device reliability evaluation and prediction are considered. The role of modeling in evaluating device reliability is discussed.