• DocumentCode
    1328861
  • Title

    Broadband lumped HBT amplifiers

  • Author

    Krishnan, S. ; Mensa, D. ; Guthrie, J. ; Jaganathan, S. ; Mathew, T. ; Girish, R. ; Wei, Y. ; Rodwell, M.J.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    36
  • Issue
    5
  • fYear
    2000
  • fDate
    3/2/2000 12:00:00 AM
  • Firstpage
    466
  • Lastpage
    467
  • Abstract
    The authors report the realisation of wideband amplifiers using AllnAs/GaInAs transferred-substrate heterojunction bipolar transistors (HBTs). The first amplifier is in the fτ doubler configuration with an input emitter follower while the second is a Darlington stage designed for high gain. The former had a low frequency gain of 8.2 dB and a 3 dB bandwidth of 80 GHz. While the latter had a low frequency gain of 18 dB and a bandwidth of 50 GHz
  • Keywords
    III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; wideband amplifiers; 18 dB; 50 GHz; 8.2 dB; 80 GHz; AlInAs-GaInAs; Darlington stage; broadband lumped HBT amplifiers; input emitter follower; transferred-substrate heterojunction bipolar transistors; wideband amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000355
  • Filename
    840105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1328861