An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

Author

Wellenius, Patrick ; Suresh, Arun ; Luo, Haojun ; Lunardi, Leda M. ; Muth, John F.

Author_Institution

Electr. & Comput. Eng. Dept., North Carolina State Univ., Raleigh, NC, USA

Volume

5

Issue

12

fYear

2009

Firstpage

438

Lastpage

445

Abstract

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

Keywords

amorphous semiconductors; electroluminescent displays; gallium compounds; indium compounds; phosphors; rare earth compounds; thin film transistors; InGaZnO; active matrix electroluminescent pixel; display technology; rare-earth doped amorphous-oxide semiconductor electroluminescent phosphor; thin-film phosphor; thin-film transistors; Active matrix technology; Amorphous materials; Displays; Electroluminescence; Electroluminescent devices; Frequency modulation; Indium gallium zinc oxide; Phosphors; Semiconductor thin films; Thin film transistors; Amorphous semiconductors (AOS); electroluminescent (EL) devices; flat panel displays; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2009.2024012

Filename

5331970