• DocumentCode
    1330014
  • Title

    Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator

  • Author

    Yu, E.F. ; Shen, J. ; Walther, M. ; Lee, T.-C. ; Zhang, R.

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • Volume
    36
  • Issue
    4
  • fYear
    2000
  • fDate
    2/17/2000 12:00:00 AM
  • Firstpage
    359
  • Lastpage
    361
  • Abstract
    A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al0.98 Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3 /GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about -4V, a transconductance of 23.9 mS/mm and a low gate leakage current
  • Keywords
    MOSFET; encapsulation; etching; insulating thin films; ion implantation; isolation technology; leakage currents; -4 V; Al2O3-GaAs; AlGaAs-GaAs; channel encapsulation; depletion-mode device; device fabrication; device isolation; gate leakage current; ion implantation; planar MOSFET; selective etches; threshold voltage; transconductance; wet thermally oxidised gate insulator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000281
  • Filename
    840261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1330014