Complementary Thin-Film Electronics Based on n-Channel ZnO and p-Channel ZnTe

In this letter, we report on the fabrication of ZnO and ZnTe thin-film transistors (TFTs) on SiO₂/Si substrates in a bottom-gate configuration. The ZnO TFT devices exhibit field effect mobility of mu ~ 4 cm²/V middot s and an on/off current ratio exceeding 10⁹. The on/off-current ratio of the ZnTe devices was found to be 100, limited by the off current. Incorporation of the ZnTe and ZnO TFTs in a complementary logic circuit demonstrates inverter behavior with a high output voltage of V_OH > 14 V and low output voltage of V_OL < 0.2 V for a supply voltage of 15 V. The small signal gain for the transfer characteristic is found to be dV_out/ dV_in = -5 at V_in = 6 V.