• DocumentCode
    1331068
  • Title

    Electrical Stability of Hexagonal a-Si:H TFTs

  • Author

    Yoo, Geonwook ; Lee, Hojin ; Kanicki, Jerzy

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    31
  • Issue
    1
  • fYear
    2010
  • Firstpage
    53
  • Lastpage
    55
  • Abstract
    In this letter, we study the current-temperature-stress-induced electrical instability of single and multiple hexagonal (HEX) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) connected in parallel. The influence of the threshold voltage shift of a single HEX TFT on the overall electrical performance of multiple HEX TFTs is discussed. The results indicate that a-Si:H HEX TFTs have an improved electrical stability and a threshold voltage shift linear dependence on a number of connected HEX-TFT units.
  • Keywords
    amorphous semiconductors; thin film transistors; HEX TFT; current-temperature-stress-induced electrical instability; hexagonal a-Si:H TFT; hydrogenated amorphous silicon thin-film transistors; Amorphous silicon; current–temperature stress (CTS); hexagonal thin-film transistor (HEX TFT); parallel-connected transistors; threshold voltage $(V_{rm th})$;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034760
  • Filename
    5332377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1331068