An a-SiGe:H phototransistor integrated with a Pd film on glass substrate for hydrogen monitoring

Author

Hsieh, Wen Tse ; Fang, Yean Kuen ; Lee, W.J. ; Wu, Kun-Hsien ; Ho, Jyh-Jier ; Chen, Kui-Huin ; Huang, S.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

939

Lastpage

943

Abstract

A novel a-SiGe:H optoelectronic hydrogen gas sensing device has been developed. The optoelectronic gas sensing device integrated a high optical gain a-SiGe:H optical sensor with a sputtered palladium (Pd) film on a glass substrate. Through the mechanism of the Pd film´s transmitted optical power modulated with the H₂ concentration in atmosphere, the device can be operated at room temperature with a wider range (50 ppm to 133000 ppm) and faster response, in comparison to a conventional Pd catalytic type H₂ sensors, thus providing a good candidate for hydrogen monitoring

Keywords

Ge-Si alloys; amorphous semiconductors; gas sensors; hydrogen; integrated optoelectronics; monitoring; optical sensors; palladium; phototransistors; H monitoring; H₂; H₂ concentration; Pd; Pd film; SiGe:H; a-SiGe:H phototransistor; glass substrate; optoelectronic gas sensing device; sputtered Pd film; Glass; Hydrogen; Integrated optics; Optical devices; Optical films; Optical modulation; Optical sensors; Palladium; Phototransistors; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841224

Filename

841224