Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT

Author

Bruce, S ; Vandamme, L.K.J. ; Rydberg, Anders

Author_Institution

Uppsala Univ., Sweden

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

1107

Lastpage

1112

Abstract

The temperature dependence and electrical properties of the dominant low-frequency noise source in a SiGe HBT have been investigated. By employing a temperature variation of the device to get a variation of the base or collector current independently of each other, it is shown that the dominant noise source is strongly dependent on the collector current, but only weakly dependent on the base current. A modified Ebers-Moll model is presented that accounts for the collector current dependence of the dominant noise source and simultaneously accounts for the temperature dependence of β. Using the modified Ebers-Moll model, the understanding of the physical positioning of the noise source is simplified

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; HBT; SiGe; base current; collector current; dominant noise source; electrical properties; low-frequency noise source; modified Ebers-Moll model; physical positioning; temperature dependence; Bipolar transistors; Circuit noise; Degradation; Germanium silicon alloys; Helium; Heterojunction bipolar transistors; Low-frequency noise; Semiconductor device noise; Silicon germanium; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841247

Filename

841247