Highly uniform vertical-cavity surface-emitting lasers integrated with microlens arrays

Author

Eitel, S. ; Fancey, S.J. ; Gauggel, H.-P. ; Gulden, K.H. ; Bächtold, W. ; Taghizadeh, M.R.

Author_Institution

Centre Suisse d´´Electron. et de Microtech., Zurich, Switzerland

Volume

12

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

459

Lastpage

461

Abstract

In this paper, work is described on the fabrication of highly uniform 8/spl times/8 arrays of GaAs-AlGaAs vertical-cavity surface-emitting lasers (VCSEL´s). Oxide-confined VCSEL arrays show an average threshold current of 0.74/spl plusmn/0.02 mA, an average output power of 2.05/spl plusmn/0.03 mW at 8 mA and an average power conversion efficiency of 14.3%. Their wavelength is measured to be 967/spl plusmn/0.35 nm over the array. In addition, we describe the alignment and integration of these device arrays with arrays of refractive microlenses to allow beam shaping typically required in system applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; microlenses; optical interconnections; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 0.74 mA; 14.3 percent; 2.05 mW; 967 nm; GaAs-AlGaAs; GaAs-AlGaAs VCSELs; average output power; average power conversion efficiency; average threshold current; beam shaping; device array alignment; electrical parameter uniformity; highly uniform vertical-cavity surface-emitting lasers; microlens arrays; optical parameter uniformity; optoelectronic interconnects; oxide-confined VCSEL arrays; refractive microlens arrays; Lenses; Microoptics; Optical arrays; Optical device fabrication; Power conversion; Power generation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.841252

Filename

841252