• DocumentCode
    1331351
  • Title

    Ultracompact multimode interference 3-dB coupler with strong lateral confinement by deep dry etching

  • Author

    Yong Ma ; Seoijin Park ; Liwei Wang ; Seng Tiong Ho

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
  • Volume
    12
  • Issue
    5
  • fYear
    2000
  • fDate
    5/1/2000 12:00:00 AM
  • Firstpage
    492
  • Lastpage
    494
  • Abstract
    Extremely short InP-InGaAsP MMI 3-dB couplers (L/spl sim/15-50 μm) with conventional structure have been successfully fabricated. The significant size reduction was achieved by deep dry etching and tapered access waveguide with large S-bend design. Optical transmission measurements on these devices have been performed. An optical bandwidth about 80 nm with a limit of 2-dB excess loss was obtained for most of the couplers. During the whole tunable wavelength range (/spl lambda//spl sim/1485-1580 nm), the imbalance is within /spl plusmn/0.5 dB. Fabrication tolerance and polarization independence are also investigated and the results demonstrated the applicability of these ultracompact devices in high-density photonic integrated circuit.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light interference; optical couplers; optical fabrication; sputter etching; 1485 to 1580 nm; InP-InGaAsP; S-bend design; deep dry etching; excess loss; fabrication; lateral confinement; optical bandwidth; optical transmission; photonic integrated circuit; polarization independence; tapered access waveguide; ultracompact multimode interference coupler; wavelength tuning; Bandwidth; Couplings; Dry etching; Interference; Optical devices; Optical losses; Optical waveguides; Performance evaluation; Ultraviolet sources; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.841263
  • Filename
    841263