Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode

Author

Cho, S.R. ; Yang, S.K. ; Ma, J.S. ; Lee, S.D. ; Yu, J.S. ; Choo, A.G. ; Kim, T.I. ; Burm, J.

Author_Institution

Optoelectron. Div., Samsung Electron., Suwon, South Korea

Volume

12

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

534

Lastpage

536

Abstract

We obtained a series of experimental results showing the effects of floating guard rings (FGRs) in InGaAs-InGaAsP-InP separate absorption, grading, charge, and multiplication avalanche photodiodes. It was confirmed from the scanned photocurrent curves that the essential role of FGRs is to disperse the curved equipotential lines at the lateral junction periphery and to give a low field route for a carrier beneath the FGRs. FGR effect mainly depends on guard ring spacing and it also depends on the magnitude of the applied bias. In our optimum guard ring condition, the current gain at the active planar region found to be 1.4 times larger than that at the curved edge.

Keywords

III-V semiconductors; avalanche photodiodes; diffusion; gallium arsenide; indium compounds; optical communication equipment; InGaAs-InGaAsP-InP; InGaAs-InGaAsP-InP separate absorption grading charge and multiplication avalanche photodiodes; active planar region; applied bias; avalanche multiplication; carrier beneath; curved edge; curved equipotential lines; diffused junction; floating guard rings; guard ring spacing; lateral junction periphery; low field route; optimum guard ring condition; planar InGaAs-InP avalanche photodiode; scanned photocurrent curves; Absorption; Avalanche photodiodes; Business communication; Dark current; Electric breakdown; Etching; Fabrication; Indium phosphide; Optical fiber communication; Photoconductivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.841277

Filename

841277