DocumentCode
133213
Title
Highly efficient GaN-based bipolar cascade LEDs
Author
Piprek, Joachim
Author_Institution
NUSOD Inst. LLC, Newark, DE, USA
fYear
2014
fDate
1-4 Sept. 2014
Firstpage
19
Lastpage
20
Abstract
GaN-based light-emitting diodes (LEDs) exhibit a severe efficiency droop with increasing current. The physical mechanisms behind this droop phenomenon are still under dispute, but most droop models hold the rising carrier density inside the quantum wells responsible. This paper analyses a new approach to circumvent the droop problem by raising the quantum efficiency beyond 100% utilizing multiple tunnel junctions inside the multi-quantum well active region.
Keywords
III-V semiconductors; carrier density; gallium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; GaN; carrier density; highly efficient GaN-based bipolar cascade LED; light emitting diodes; multiple tunnel junctions; multiquantum well active region; quantum efficiency droop; quantum wells; Charge carrier density; Current density; Junctions; Light emitting diodes; Photonics; Power generation; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location
Palma de Mallorca
ISSN
2158-3234
Print_ISBN
978-1-4799-3681-6
Type
conf
DOI
10.1109/NUSOD.2014.6935335
Filename
6935335
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