Monte Carlo simulation of hot electron transport in III-N LEDs

Author

Kivisaari, Pyry ; Sadi, Toufik ; Oksanen, Jani ; Tulkki, Jukka

Author_Institution

Dept. of Biomed. Eng. & Comput. Sci., Aalto Univ., Aalto, Finland

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

21

Lastpage

22

Abstract

We study electron dynamics in a multi-quantum well (MQW) light-emitting diode (LED) using Monte Carlo simulation and show that at strong injection, Auger recombination in the quantum wells creates a hot electron population which is still visible at the p-contact 250 nm away from the MQW. The Auger-excited electrons also generate a leakage current that is notably larger than leakage predicted by drift-diffusion, indicating that electron leakage in III-N LEDs at strong injection is predominantly caused by Auger-excited hot electrons.

Keywords

Auger effect; III-V semiconductors; Monte Carlo methods; diffusion; hot carriers; leakage currents; light emitting diodes; quantum well devices; semiconductor quantum wells; Auger recombination; Auger-excited electrons; III-N LED; Monte Carlo simulation; drift-diffusion; electron dynamics; electron leakage; hot electron transport; leakage current; light-emitting diode; multiquantum well LED; Leakage currents; Light emitting diodes; Mathematical model; Quantum well devices; Sociology; Spontaneous emission; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935336

Filename

6935336