Simulation of a ridge-type semiconductor laser with selective double-sided anti-guiding and partially undoped cladding layers

In this paper, a ridge-type semiconductor laser with selective double-sided anti-guiding and partially undoped cladding layers is proposed to reduce the threshold current. Since the undoped cladding layers have electrical resistance higher than p-doped cladding layers. As a result, lateral spreading of the injected current in the active layers below the antiguiding cladding layers is suppressed, leading to low threshold current.