DocumentCode
1332708
Title
Charge-coupled devices - A new approach to MIS device structures
Author
Boyle, W.S. ; Smith, G.E.
Author_Institution
Bell Telephone Laboratories, Inc.
Volume
8
Issue
7
fYear
1971
fDate
7/1/1971 12:00:00 AM
Firstpage
18
Lastpage
27
Abstract
Recent advances in materials and processing have resulted in a new class of information-handling structure¿the charge-coupled device. This three-layer structure creates and stores minority carriers, or their absence, in potential wells near the surface of the semiconductor. The minority carriers move from under one electrode to a closely adjacent electrode on the same substrate when a more negative voltage is applied to the adjacent electrode. Because of their high transfer efficiency, these devices have already found application as image sensors. In addition, there is every expectation that memories made by use of the stored-charge concept will be less expensive and faster, and will require less power than a magnetic counterpart now in use.
Keywords
Delay; Displays; Electrodes; Image sensors; Laboratories; MIS devices; Oscillators; Semiconductor materials; Silicon compounds; Telephony;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1971.5218282
Filename
5218282
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