• DocumentCode
    1332708
  • Title

    Charge-coupled devices - A new approach to MIS device structures

  • Author

    Boyle, W.S. ; Smith, G.E.

  • Author_Institution
    Bell Telephone Laboratories, Inc.
  • Volume
    8
  • Issue
    7
  • fYear
    1971
  • fDate
    7/1/1971 12:00:00 AM
  • Firstpage
    18
  • Lastpage
    27
  • Abstract
    Recent advances in materials and processing have resulted in a new class of information-handling structure¿the charge-coupled device. This three-layer structure creates and stores minority carriers, or their absence, in potential wells near the surface of the semiconductor. The minority carriers move from under one electrode to a closely adjacent electrode on the same substrate when a more negative voltage is applied to the adjacent electrode. Because of their high transfer efficiency, these devices have already found application as image sensors. In addition, there is every expectation that memories made by use of the stored-charge concept will be less expensive and faster, and will require less power than a magnetic counterpart now in use.
  • Keywords
    Delay; Displays; Electrodes; Image sensors; Laboratories; MIS devices; Oscillators; Semiconductor materials; Silicon compounds; Telephony;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1971.5218282
  • Filename
    5218282