Circuit model of UTC-PD with high power and enhanced bandwidth technique

Author

Khanra, Senjuti ; Barman, Abhirup Das

Author_Institution

Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

91

Lastpage

92

Abstract

An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; integrated optoelectronics; optimisation; photodiodes; photoemission; semiconductor device models; InGaAs-InP; UTC-PD; circuit model; device output photocurrent; device parameter optimisation; electrical circuit simulator; electrical equivalent circuit model; enhanced bandwidth technique; linearity; shunt inductance; unitravelling carrier photodiode; Absorption; Bandwidth; Inductance; Integrated circuit modeling; Load modeling; Photoconductivity; Photodiodes; circuit model; inter-modulation; photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935371

Filename

6935371