Quantum model for carrier capture time through phonon emission in InGaN/GaN LEDs

Author

Vallone, M.E. ; Bertazzi, Francesco ; Goano, Michele ; Ghione, G.

Author_Institution

Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

99

Lastpage

100

Abstract

A quantum model is developed to obtain electron capture time in a quantum well through electron-longitudinal optic phonon emission, as function of carrier density, showing the interplay between phonon and collective plasma modes. We demonstrate that the usual approximation of a constant capture time in modeling of light-emitting diodes is not adequate, because this parameter varies considerably with the device working point.

Keywords

III-V semiconductors; carrier density; electron capture; gallium compounds; indium compounds; light emitting diodes; phonons; wide band gap semiconductors; InGaN-GaN; LED; carrier capture time; carrier density; collective plasma modes; device working point; electron capture time; electron-longitudinal optic phonon emission; light-emitting diodes; phonon emission; phonon modes; quantum model; quantum well; Approximation methods; Charge carrier density; Eigenvalues and eigenfunctions; Gallium nitride; Light emitting diodes; Phonons; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935375

Filename

6935375