A numerical investigation of continuous wave parametric gain in silicon nano-waveguides at wavelengths around 1550 nm

Author

Dziallas, Giannino ; Jazajerifar, Mahmoud ; Gajda, Andrzej ; Zimmermann, L. ; Petermann, K.

Author_Institution

Inst. fur Hochfrequenz- und Halbleiter-Systemtechnologien, Tech. Univ. Berlin, Berlin, Germany

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

115

Lastpage

116

Abstract

We developed a numerical model to investigate continuous wave four wave mixing (FWM) in silicon nano-waveguides with embedded PIN junctions. The model is complemented by fitting to the experimental data. Using the model we show that the FWM gain in silicon can compensate for all relevant loss mechanisms (two photon and free carrier absorption as well as linear loss) provided that the carrier lifetime is low enough (few tens of picoseconds).

Keywords

carrier lifetime; elemental semiconductors; multiwave mixing; nanophotonics; numerical analysis; optical waveguides; silicon; FWM; PIN junctions; carrier lifetime; continuous wave parametric gain; four wave mixing; free carrier absorption; linear loss; numerical model; silicon nano-waveguides; Absorption; Junctions; Numerical models; Optical waveguides; Optimized production technology; Propagation losses; Silicon; four-wave-mixing; parametric amplification; pin-junction; silicon waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935383

Filename

6935383