• DocumentCode
    1333073
  • Title

    Polarisation insensitive, 25 dB gain semiconductor laser amplifier without antireflection coatings

  • Author

    Kelly, A.E. ; Lealman, I.F. ; Rivers, L.J. ; Perrin, S.D. ; Silver, M.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • Volume
    32
  • Issue
    19
  • fYear
    1996
  • fDate
    9/12/1996 12:00:00 AM
  • Firstpage
    1835
  • Lastpage
    1836
  • Abstract
    An angled facet strained MQW semiconductor laser amplifier with integrated mode expanders has been designed and fabricated. A device without antireflection coatings had <0.5 dB gain ripple and 0.5 dB polarisation sensitivity at 25 dB gain
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser modes; light polarisation; quantum well lasers; 25 dB; InGaAs; angled facet; gain ripple; integrated mode expanders; optical networks; polarisation sensitivity; semiconductor laser amplifier; strained MQW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961220
  • Filename
    533616
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1333073