Implementation of the temperature and narrow channel dependence on threshold voltage model of NMOSFETs

Author

Ruangphanit, A. ; Sakuna, N. ; Niemcharoen ; Phinyo, B. ; Muanghlua, R.

Author_Institution

Dept. of Electron. Eng., King Mongkut´s Inst. of Technol., Bangkok, Thailand

fYear

2014

fDate

5-8 March 2014

Firstpage

1

Lastpage

5

Abstract

In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I_DS -V_GS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.

Keywords

MOSFET; semiconductor device models; BSIM3; MOSFET; NMOSFETs; body-bias coefficient; narrow channel dependence; parameter extraction; spice level 3; temperature coefficient; threshold voltage model; transconductance characteristics; MOSFET; Semiconductor device modeling; Temperature; Temperature dependence; Temperature measurement; Threshold voltage; BSIM3; MOSFETs; NMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technology, Electronic and Electrical Engineering (JICTEE), 2014 4th Joint International Conference on

Conference_Location

Chiang Rai

Print_ISBN

978-1-4799-3854-4

Type

conf

DOI

10.1109/JICTEE.2014.6804064

Filename

6804064