Surface-Potential-Based Analytic DC $I$ – $V$ Model With Effective Electron Density for

A surface-potential-based analytic direct-current I -V model for amorphous indium-gallium-zinc-oxide thin-film transistors is proposed by adopting an effective electron density (n_eff) model for inclusion of both free carriers and localized charges in the channel. The proposed n_eff is efficient in reducing the error caused by neglecting the localized electron density n_loc and allows a closed form of the analytic I-V model. The potential drop across the parasitic resistance R_P in the source and drain regions is also fully considered in the model. Finally, we confirmed good agreement of the proposed model with measured I_DS-V_DS characteristics over a wide range of V_GS and V_DS.