Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output

Author

Lee, Jieun ; Lee, Jin-Moo ; Lee, Jung Han ; Lee, Won Hee ; Uhm, Mihee ; Park, Byung-Gook ; Kim, Dong Myong ; Jeong, Yong-Joo ; Kim, Dae Hwan

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

33

Issue

12

fYear

2012

Firstpage

1768

Lastpage

1770

Abstract

Complementary Si nanowire (SiNW) hydrogen ion sensors with high sensitivity and robust voltage output are demonstrated on a 6-in silicon-on-insulator wafer using a conventional wafer-level top-down process. The proposed SiNW sensors exhibit a logic threshold voltage shift of 88.9 mV/pH and an output voltage swing of 162 mV/pH. Furthermore, a simplified analytical model confirms that the proposed sensors have an output voltage swing that is 1.6 times larger than single SiNW sensor counterparts with a resistive load. Therefore, the proposed fabrication approach is expected to be a good solution for a very sensitive voltage readout scheme for the mass production of top-down processed biosensors.

Keywords

biosensors; chemical sensors; elemental semiconductors; nanosensors; nanowires; pH; silicon; silicon-on-insulator; 6-in silicon-on-insulator wafer; H; Si; complementary silicon nanowire hydrogen ion sensor; conventional wafer-level top-down process; logic threshold voltage shift; mass production; output voltage swing; pH; resistive load; robust voltage output; size 6 in; top-down processed biosensor; voltage readout scheme; Biosensors; FETs; Hydrogen; Nanowires; Sensitivity; Silicon; Threshold voltage; Complementary inverter; hydrogen ion sensor; silicon nanowire FET; top-down fabrication; voltage readout;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2220515

Filename

6353135