DocumentCode
1334924
Title
Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- 
/Metal Gate pMOSFET
Author
Chen, Y.W. ; Lai, C.M. ; Chiang, T.F. ; Cheng, L.W. ; Yu, C.H. ; Chou, C.H. ; Hsu, C.H. ; Chang, W.Y. ; Wu, T.B. ; Lin, C.T.
Author_Institution
ATD Exploratory Technol. Div., United Microelectron. Corp., Tainan, Taiwan
Volume
31
Issue
11
fYear
2010
Firstpage
1290
Lastpage
1292
Abstract
The impact of aluminum (Al) implantation into TiN/HfO2/ SiO2 on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage (VFB) shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of 5 × 1015 cm-2 raised the VFB to about 250 mV compared with a nonimplanted gate stack. Moreover, the VFB shift can be up to about 800 mV at 2 keV with the same dose level accompanied with slightly equivalent oxide thickness penalty and gate leakage current degradation. Optimized process window to control Al diffusion depth was essential to minimize these impacts.
Keywords
MOSFET; aluminium; hafnium compounds; high-k dielectric thin films; silicon compounds; titanium compounds; Al; TiN-HfO2-SiO2; effective work function modulation; electron volt energy 1.2 keV; electron volt energy 2 keV; equivalent oxide thickness penalty; gate leakage current degradation; high-k-metal gate pMOSFET; ion implantation; Degradation; Leakage current; Logic gates; Modulation; Silicon; Tin; $hbox{HfO}_{2}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2066952
Filename
5585695
Link To Document