Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory

Author

Chen, Chao ; Gao, Shuang ; Tang, Guangsheng ; Song, Cheng ; Zeng, Fei ; Pan, Feng

Author_Institution

Dept. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China

Volume

33

Issue

12

fYear

2012

Firstpage

1711

Lastpage

1713

Abstract

This letter covers the fabrication of a nonpolar resistive switching (RS) random access memory device using Cu-embedded AlN and its reproducible RS characteristics. The AlN-based memory device shows endurance of >; 10³, reliable retention time (ten years extrapolation at both room temperature and 85°C), and fast programming speed under 100-ns pulses in unipolar operation mode. The switching mechanism is believed to be mediated by the formation and rupture of conductive Cu filaments.

Keywords

III-V semiconductors; aluminium compounds; copper; embedded systems; fracture; random-access storage; reliability; wide band gap semiconductors; Cu-AlN; IEEE nonpolar resistive switching random access memory device; conductive filament formation; conductive filament rupture; embedded AlN-based nonpolar nonvolatile resistive switching memory; fast programming speed; reliable retention time; temperature 293 K to 298 K; temperature 85 degC; time 100 ns; unipolar operation mode; Aluminum nitride; Annealing; Copper; Nonvolatile memory; Random access memory; Resistance; AlN; nonvolatile memory; resistance random access memory (RRAM); resistive switching (RS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2220953

Filename

6353511