Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETs

Author

Shenai, Krishna

Author_Institution

General Electric Co., Schenectady, NY, USA

Volume

25

Issue

2

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

595

Lastpage

601

Abstract

Accurate gate resistance values for large-area power MOSFETs have been obtained from calorimetric power loss measurements. It is shown that advanced power MOSFETs fabricated using refractory silicide gates exhibit a fivefold reduction in the gate resistance compared to conventional power MOSFETs with heavily POCl₃-doped polysilicon gates. Power MOSFETs with integral Schottky diodes are shown to further reduce the resistive-gate power dissipation. A simple analysis is used to evaluate the switching efficiency of power MOSFETs as a function of output current and switching frequency

Keywords

insulated gate field effect transistors; power transistors; semiconductor switches; switching; calorimetric power loss measurements; gate resistance; high-frequency; integral Schottky diodes; large area devices; output current; power MOSFETs; power switching efficiencies; refractory silicide gates; switching frequency; Electrical resistance measurement; Immune system; Loss measurement; MOSFETs; Power dissipation; Power measurement; Schottky diodes; Silicidation; Switching frequency; Switching systems;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.52188

Filename

52188