Schottky-barrier infrared focal plane arrays with novel readout structures

Author

Mcnutt, Michael J. ; Maattson, R.B. ; Vu, Anh N.

Author_Institution

Ford Aerosp. Corp., Newport Beach, CA, USA

Volume

25

Issue

2

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

602

Lastpage

608

Abstract

A description is given of 128×128 and 256×256 pixel Schottky-barrier infrared focal-plane arrays that incorporate meander channel CCD readout structures for the IR-induced image charge. These innovations reduce the nonimaging area in each pixel and increase the fill factor. A design figure of merit that allows direct comparisons of design efficiency while normalizing pixel area, design rules, and number of process layers is proposed. Test results show excellent performance for the two arrays with both medium-wavelength (⩽6 μm) PtSi diodes operating at 83 K and long-wavelength (⩽11 μm) IrSi diodes operating at 50 K

Keywords

CCD image sensors; Schottky-barrier diodes; infrared imaging; 11 micron; 128 pixel; 16384 pixel; 256 pixel; 50 K; 6 micron; 65536 pixel; 83 K; FPA; IR-induced image charge; IrSi diodes; PtSi diodes; Schottky-barrier; image sensor; infrared focal plane arrays; long-wavelength; meander channel CCD; medium-wavelength; parallel readout; readout structures; Charge coupled devices; Hot carriers; Infrared detectors; Infrared imaging; Optical imaging; Photonic band gap; Schottky diodes; Silicides; Silicon; Substrates;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.52189

Filename

52189