DocumentCode
1335973
Title
Thermal Accumulation Effects on the Transient Temperature Responses in LDMOSFETs Under the Impact of a Periodic Electromagnetic Pulse
Author
Ren, Zhen ; Yin, Wen-Yan ; Shi, Yan-Bing ; Liu, Qing Huo
Author_Institution
Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai, China
Volume
57
Issue
1
fYear
2010
Firstpage
345
Lastpage
352
Abstract
Thermal accumulation effects in an LDMOSFET under the impact of a periodic electromagnetic pulse (EMP) are investigated using time-domain finite-element method combined with the preconditioned conjugated gradient technique. The transient thermal response in the LDMOSFET and its peak temperature are captured and compared, with different waveforms of the injected EMP chosen for computation. It is shown that, as the ratio of the pulsewidth and its periodicity increases, thermal accumulation effects on the transient thermal response as well as the peak temperature in LDMOSFETs are observable, which should be treated appropriately in the prediction of its electrothermal breakdown and reliability.
Keywords
MOSFET; conjugate gradient methods; electromagnetic pulse; finite element analysis; time-domain analysis; transient response; LDMOSFET; electrothermal breakdown; periodic electromagnetic pulse; preconditioned conjugated gradient technique; thermal accumulation effects; time-domain finite-element method; transient temperature responses; transient thermal response; EMP radiation effects; Electric breakdown; Electromagnetic transients; Electrostatic discharge; Electrothermal effects; Finite element methods; Radio frequency; Space vector pulse width modulation; Temperature; Time domain analysis; Electrostatic discharge (ESD); LDMOSFET; peak temperature; periodic electromagnetic pulse (EMP); thermal accumulation; time-domain finite-element method (FEM); transient thermal response;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2034995
Filename
5337951
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