• DocumentCode
    1335973
  • Title

    Thermal Accumulation Effects on the Transient Temperature Responses in LDMOSFETs Under the Impact of a Periodic Electromagnetic Pulse

  • Author

    Ren, Zhen ; Yin, Wen-Yan ; Shi, Yan-Bing ; Liu, Qing Huo

  • Author_Institution
    Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai, China
  • Volume
    57
  • Issue
    1
  • fYear
    2010
  • Firstpage
    345
  • Lastpage
    352
  • Abstract
    Thermal accumulation effects in an LDMOSFET under the impact of a periodic electromagnetic pulse (EMP) are investigated using time-domain finite-element method combined with the preconditioned conjugated gradient technique. The transient thermal response in the LDMOSFET and its peak temperature are captured and compared, with different waveforms of the injected EMP chosen for computation. It is shown that, as the ratio of the pulsewidth and its periodicity increases, thermal accumulation effects on the transient thermal response as well as the peak temperature in LDMOSFETs are observable, which should be treated appropriately in the prediction of its electrothermal breakdown and reliability.
  • Keywords
    MOSFET; conjugate gradient methods; electromagnetic pulse; finite element analysis; time-domain analysis; transient response; LDMOSFET; electrothermal breakdown; periodic electromagnetic pulse; preconditioned conjugated gradient technique; thermal accumulation effects; time-domain finite-element method; transient temperature responses; transient thermal response; EMP radiation effects; Electric breakdown; Electromagnetic transients; Electrostatic discharge; Electrothermal effects; Finite element methods; Radio frequency; Space vector pulse width modulation; Temperature; Time domain analysis; Electrostatic discharge (ESD); LDMOSFET; peak temperature; periodic electromagnetic pulse (EMP); thermal accumulation; time-domain finite-element method (FEM); transient thermal response;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2034995
  • Filename
    5337951